PART |
Description |
Maker |
RJK6024DPD-00J2 RJK6024DPD-12 |
600V - 0.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6011DJA-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6013DPP-E0 RJK6013DPP-E0-15 |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJQ6020DPM |
600V - 20A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S5DPE-00-J3 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S5DPQ-E0 RJK60S5DPQ-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S7DPQ-E0-T2 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL60S5DPE |
600V - 20A - SJ MOS FET
|
Renesas Technology
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
2SK1274 2SK1274-T |
N-channel power MOS FET N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SK2110 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS Field Effect Transistor
|
NEC[NEC]
|